inchange semiconductor isc product specification isc silicon npn power transistors BUX32/a/b description high switching speed collector-emitter sustaining voltage- : v ceo(sus) = 400v (min)-BUX32 = 450v (min)-BUX32a = 450v (min)-BUX32b low saturation voltage applications designed for off-line power supplies and are also well suited for use in a wide range of inve rter or converter circuits and pulse-width-modulated regulators. absolute maximum ratings(t a =25 ) symbol parameter max unit BUX32 800 BUX32a 900 v ces collector- emitter voltage(v be = 0) BUX32b 1000 v BUX32 400 BUX32a 450 v ceo collector-emitter voltage BUX32b 500 v v ebo emitter-base voltage 8 v i c collector current-continuous 8 a i cm collector current-peak 10 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BUX32/a/b electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUX32 400 BUX32a 450 v ceo(sus) collector-emitter sustaining voltage BUX32b i c = 0.2a ; i b = 0 500 v v ce( sat ) collector-emitter saturation voltage i c = 6a; i b = 1.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 6a; i b = 1.2a b 1.3 v BUX32 v ce = 800v;v be = -1.5v v ce = 800v;v be = -1.5v,t c =125 0.1 1.0 BUX32a v ce = 900v;v be = -1.5v v ce = 900v;v be = -1.5v,t c =125 0.1 1.0 i cev collector cutoff current BUX32b v ce = 1000v;v be = -1.5v v ce = 1000v;v be = -1.5v,t c =125 0.1 1.0 ma i ebo emitter cutoff current v eb = 8v; i c = 0 2 ma h fe dc current gain i c = 6a ; v ce = 3v 8 f t current-gain?bandwidth product i c = 0.2a ;v ce = 10v 15 mhz isc website www.iscsemi.cn
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